光电传感器 英文:光电传感器(中英文对照版).pdf

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光电传感器英文:光电传感器(中英文对照版).pdfPhotoelectricsensorKeyword:photoelectriceffectphotoelectricelementphotoelectricsensorclassificationsensorapplicationcharacteristics.Abstract:intherapidde

光电传感器 英文:光电传感器(中英文对照版).pdf  第1张

光电传感器 英文:光电传感器(中英文对照版).pdf

Photoelectric sensor
Key word: photoelectric effect photoelectric element photoelectric sensor
classification sensor application characteristics .
Abstract: in the rapid development of science and technology in the modern
society, mankind has into the rapidly changing information era, people in daily
life, the production process, rely mainly on the detection of information
technology by acquiring, screening and transmission, to achieve the brake
control, automatic adjustment, at present our country has put detection
techniques listed in one of the priority to the development of science and
technology. Because of microelectronics technology, photoelectric
semiconductor technology, optical fiber technology and grating technical
development makes the application of the photoelectric sensor is growing. The
sensor has simple structure, non-contact, high reliability, high precision,
measurable parameters and quick response and more simple structure, form etc,
and flexible in automatic detection technology, it has been widely applied in
photoelectric effect as the theoretical basis, the device by photoelectric material
composition.
Text:
First, theoretical foundation - photoelectric effect
Photoelectric effect generally have the photoelectric effect, optical effect, light
born volts effect.
Word 文档
The light shines in photoelectric material, according to the electronic absorption
material surface energy, if absorbed energy large enough electronic electronic
will overcome bound from material surface and enter the outside space, which
changes photoelectron materials, this kind of phenomenon become the
conductivity of the photoelectric effect
According to Einstein's photoelectron effect, photon is moving particles, each
photon energy for hv (v for light frequency, h for Planck's constant, h=6.63 *
10-34 J/HZ), thus different frequency of photons have different energy, light, the
higher the frequency, the photon energ光电传感器 英文:光电传感器(中英文对照版).pdf  第2张

光电传感器 英文:光电传感器(中英文对照版)

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Word?
文档
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Photoelectric?sensor
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Key?word:?
photoelectric?effect?photoelectric?element?photoelectric?sensor?
classification?sensor?application?characteristics
?.?
Abstract:
?in?the?rapid?development?of?science?and?technology?in?the?modern?
society,?mankind?has?into?the?rapidly?changing?information?era,?people?in?daily?
life,?the?production?process,?rely?mainly?on?the?detection?of?information?
technology?by?acquiring,?screening?and?transmission,?to?achieve?the?brake?
control,?automatic?adjustment,?at?present?our?country?has?put?detection?
techniques?listed?in?one?of?the?priority?to?the?development?of?science?and?
technology.?Because?of?microelectronics?technology,?photoelectric?
semiconductor?technology,?optical?fiber?technology?and?grating?technical?
development?makes?the?application?of?the?photoelectric?sensor?is?growing.?The?
sensor?has?simple?structure,?non-contact,?high?reliability,?high?precision,?
measurable?parameters?and?quick?response?and?more?simple?structure,?form?etc,?
and?flexible?in?automatic?detection?technology,?it?has?been?widely?applied?in?
photoelectric?effect?as?the?theoretical?basis,?the?device?by?photoelectric?material?
composition.
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Text:
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First,?theoretical?foundation?-?photoelectric?effect?
?
Photoelectric?effect?generally?have?the?photoelectric?effect,?optical?effect,?light?
born?volts?effect.?
?
光电传感器 英文:光电传感器(中英文对照版).pdf  第3张

光电传感器 英文:光电传感器技术,Opto

电化学多传感器技术
传感器遥感技术
光纤传感器传感技术在线检测

说明:双击或选中下面任意单词,将显示该词的音标、读音、翻译等;选中中文或多个词,将显示翻译。

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1) Opto-Electronic sensor technology

光电传感器技术

2) FBG sensor technique

光栅传感器技术
例句>>

3) photoelectric sensing technology

光电传感技术
例句>>

4) Transducer technology

传感器技术

1.

Application of transducer technology to chemical experiment teaching not only makes it possible for students to carry out those experiments that are difficult to conduct through traditional methods, but also enhances students understanding of the advanced science and technology, helps them obtain the scientific learning methods and form the correct learning attitude.

传感器技术是一种与现代科学密切相关的新兴技术,具有便捷、直观、实时、准确等特点。

更多例句>>

5) sensor technique

传感器技术

1.

New development of sensor technique in metal ions detection;

传感器技术在金属检测中的新发展

2.

This paper introduces the present situation and developing trend of the s peed regulating system of SRD,and emphatically expounds the location less sensor technique of SRD and the r ipple torque minimization techniqu e of SRD.

介绍了开关磁阻电动机调速系统(简称SRD)控制技术的现状及其发展趋势,着重阐述了SR电机的无位置传感器技术和开关磁阻电机转矩波动最小化技术。

3.

It is known as digital display radius tester which is designed by using sensor technique and micro computer technique and integrated circuit technique.

它利用传感器技术、微计算机技术和集成电路技术设计的 ,具有体积小、可手持式测量的特点 ,用LCD显示测量结果表明 ,它可用于生产现场 。

更多例句>>

6) sensor technology

传感器技术

1.

Development and trend of sensor technology;

传感器技术的发展和趋势综述

2.

Nowdays sensor technology is one of high and new technologies which developed quickly,and an important symbol of technology development.

传感器技术是当今世界令人瞩目的迅猛发展起来的高新技术之一。

3.

The article also analyzes the developing trend,opportunities and challenges of sensor technology.

介绍了传感器的定义、分类及作用,阐述了传感器技术在现代生活与科学技术中的一些主要应用,分析了传感器技术的发展趋势以及面临的挑战和机遇。

更多例句>>

补充资料:光电式传感器
  基于光电效应的传感器。光电式传感器在受到可见光照射后即产生光电效应,将光信号转换成电信号输出。它除能测量光强之外,还能利用光线的透射、遮挡、反射、干涉等测量多种物理量,如尺寸、位移、速度、温度等,因而是一种应用极广泛的重要敏感器件。光电测量时不与被测对象直接接触,光束的质量又近似为零,在测量中不存在摩擦和对被测对象几乎不施加压力。因此在许多应用场合,光电式传感器比其他传感器有明显的优越性。其缺点是在某些应用方面,光学器件和电子器件价格较贵,并且对测量的环境条件要求较高。
  
  光电效应  它是光照射到某些物质上,使该物质的电特性发生变化的一种物理现象,可分为外光电效应和内光电效应两类。外光电效应是指,在光线作用下物体内的电子逸出物体表面向外发射的物理现象。光子是以量子化"粒子"的形式对可见光波段内电磁波的描述。光子具有能量hv,h为普朗克常数,v为光频。光子通量则相应于光强。外光电效应由爱因斯坦光电效应方程描述:
   
  
  
  
  
  
  式中 m为电子质量,v0为电子逸出速度。当光子能量等于或大于逸出功时才能产生外光电效应。因此每一种物体都有一个对应于光电效应的光频阈值,称为红限频率。对于红限频率以上的入射光,外生光电流与光强成正比。内光电效应又分为光电导效应和光生伏打效应两类。光电导效应是指,半导体材料在光照下禁带中的电子受到能量不低于禁带宽度的光子的激发而跃迁到导带,从而增加电导率的现象。能量对应于禁带宽度的光子的波长称光电导效应的临界波长。光生伏打效应是指光线作用能使半导体材料产生一定方向电动势的现象。光生伏打效应又可分为势垒效应(结光电效应)和侧向光电效应。势垒效应的机理是在金属和半导体的接触区(或在PN结)中,电子受光子的激发脱离势垒(或禁带)的束缚而产生电子空穴对,在阻挡层内电场的作用下电子移向 N区外侧,空穴移向 P区外侧,形成光生电动势。侧向光电效应是当光电器件敏感面受光照不均匀时,受光激发而产生的电子空穴对的浓度也不均匀,电子向未被照射部分扩散,引起光照部分带正电、未被光照部分带负电的一种现象。
  
  分类  基于外光电效应的光电敏感器件有光电管和光电倍增管。基于光电导效应的有光敏电阻。基于势垒效应的有光电二极管和光电三极管(见半导体光敏元件)。基于侧向光电效应的有反转光敏二极管。光电式传感器还可按信号形式分为模拟式光电传感器(见位移传感器)和数字式光电传感器(见转速传感器、光栅式传感器、数字式传感器)。光电式传感器还有光纤传感器、固体图像传感器等。
  
  发展状况  1839年A.E.贝可勒尔发现当光线落在浸没于电介液中的两个金属电极上,它们之间就产生电势,后来称这种现象为光生伏打效应。1873年W.史密斯和Ch.梅伊发现硒的光电导效应。1887年H.R.赫兹发现外光电效应。基于外光电效应的光电管和光电倍增管属真空电子管或离子管器件,曾在50~60年代广泛应用,直到目前仍在某些场合继续使用。虽然早在1919年T.W.凯斯就已取得硫化铊光导探测器的专利权,但半导体光敏元件却是在60年代以后随着半导体技术的发展而开始迅速发展的。在此期间各种光电材料都得到了全面的研究和广泛的应用。它们的结构有单晶和多晶薄膜的,也有非晶的,它们的成分有元素半导体的和化合物半导体的,也有多元混晶的。其中最重要的两种是硅和碲镉汞。硅的原料丰富,工艺成熟,是制造从近红外到紫外波段光电器件的优良材料。碲镉汞是碲化汞和碲化镉的混晶,是优良的红外光敏材料。通过对光电效应和器件原理的研究已发展了多种光电器件(如光敏电阻、光电二极管、光电三极管、场效应光电管、雪崩光电二极管、电荷耦合器件等),适用于不同的场合。光电式传感器的制造工艺也随薄膜工艺、平面工艺和大规模集成电路技术的发展而达到很高的水平,并使产品的成本大为降低。被称为新一代摄像器件的聚焦平面集成光敏阵列正在取代传统的扫描摄像系统。光电式传感器的最新发展方向是采用有机化学汽相沉积、分子束外延、单分子膜生长等新技术和异质结等新工艺。光电式传感器的应用领域已扩大到纺织、造纸、印刷、医疗、环境保护等领域。在红外探测、辐射测量、光纤通信,自动控制等传统应用领域的研究也有新发展。例如,硅光电二极管自校准技术的提出为光辐射的绝对测量提供了一种很有前途的新方法。
  
  参考书目
   齐丕智等编著:《光敏器件及其应用》,科学出版社,北京,1987。
   袁希光主编:《传感器技术手册》,国防工业出版社,北京,1986。
  

说明:补充资料仅用于学习参考,请勿用于其它任何用途。

参考词条

光电传感器
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光电传感器 英文:对射光电传感器

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Product nameOperating principleRange max.Polarity/OutputConnection typeDatasheet DGI-01A-0075-PMS-107 605-000-729Operating principle:Range max.: mmPolarity/Output: Push-pull, Light-on + Dark-onConnection type: M12 4-pin Download datasheet DGI-01A-0155-PMS-107 605-000-730Operating principle:Range max.: mmPolarity/Output: Push-pull, Light-on + Dark-onConnection type: M12 4-pin Download datasheet DGI-02A-0075-PMS-107 605-000-731Operating principle:Range max.: mmPolarity/Output: Push-pull, Light-on + Dark-onConnection type: M12 4-pin Download datasheet DGI-02A-0155-PMS-107 605-000-732Operating principle:Range max.: mmPolarity/Output: Push-pull, Light-on + Dark-onConnection type: M12 4-pin Download datasheet DGI-04A-0075-NMS-107 605-000-733Operating principle:Range max.: mmPolarity/Output: Push-pull, Light-on + Dark-onConnection type: M12 4-pin Download datasheet DGI-04A-0155-NMS-107 605-000-734Operating principle:Range max.: mmPolarity/Output: Push-pull, Light-on + Dark-onConnection type: M12 4-pin Download datasheet DGI-08A-0190-NMS-107 605-000-735Operating principle:Range max.: mmPolarity/Output: Push-pull, Light-on + Dark-onConnection type: M12 4-pin Download datasheet DGI-08A-0480-NMS-107 605-000-736Operating principle:Range max.: mmPolarity/Output: Push-pull, Light-on + Dark-onConnection type: M12 4-pin Download datasheet DGI-25A-0480-NMS-107 605-000-737Operating principle:Range max.: mmPolarity/Output: Push-pull, Light-on + Dark-onConnection type: M12 4-pin Download datasheet DGI-25A-0960-NMS-107 605-000-738Operating principle:Range max.: mmPolarity/Output: Push-pull, Light-on + Dark-onConnection type: M12 4-pin Download datasheet DGI-25A-2010-NMS-107 605-000-739Operating principle:Range max.: mmPolarity/Output: Push-pull, Light-on + Dark-onConnection type: M12 4-pin Download datasheet DTL-C23PB-TMS-139-501 628-000-701Operating principle:Range max.: mmPolarity/Output: PNP/NPN auto-detect, Light-on/Dark-on + 1...10 VConnection type: M8 4-pin Download datasheet DTL-C55PA-TMS-407-507 628-000-705Operating principle:Range max.: mmPolarity/Output: PNP/NPN auto-detect, Light-on/Dark-on/IO-LinkConnection type: M12 4-pin Download datasheet DTL-C55PA-TMS-619-506 628-000-704Operating principle:Range max.: mmPolarity/Output: PNP/NPN auto-detect, Light-on/Dark-on/IO-Link + 4...20 mA / 0…10V + Teach inputConnection type: M12 5-pin Download datasheet DTR-C23PB-TLS-129 628-000-696Operating principle:Range max.: mmPolarity/Output: NPN, Light-on/Dark-on + 1...10 VConnection type: M8 4-pin Download datasheet DTR-C23PB-TLS-139 628-000-695Operating principle:Range max.: mmPolarity/Output: PNP, Light-on/Dark-on + 1...10 VConnection type: M8 4-pin Download datasheet…Next page

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